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1996 microchip technology inc. ds11024e-page 1 27lv64 features wide voltage range 3.0v to 5.5v high speed performance - 200 ns access time available at 3.0v cmos technology for low power consumption - 8 ma active current at 3.0v - 20 ma active current at 5.5v - 100 m a standby current factory programming available auto-insertion-compatible plastic packages auto id aids automated programming separate chip enable and output enable controls high speed ?xpress?programming algorithm organized 8k x 8: jedec standard pinouts - 28-pin dual-in-line package - 32-pin plcc package - 28-pin soic package - tape and reel available for the following temperature ranges: - commercial: 0?c to +70?c - industrial: -40?c to +85?c description the microchip technology inc. 27lv64 is a low-voltage (3.0 volt) cmos eprom designed for battery powered applications. the device is organized as 8k x 8 (8k- byte) non-volatile memory product. the 27lv64 con- sumes only 8ma maximum of active current during a 3.0 volt read operation therefore improving battery per- formance. this device is designed for very low voltage applications where conventional 5.0 volt only eproms can not be used. accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 200 ns at 3.0v.this device allows system designers the ability to use low voltage non-volatile memory with todays low voltage microprocessors and peripherals in battery powered applications. a complete family of packages is offered to provide the most ?xibility in applications. for surface mount appli- cations, plcc or soic packaging is available. tape and reel packaging is also available for plcc or soic packages. package types ?1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 v a12 a7 a6 a5 a4 a3 a2 a1 a0 o0 o1 o2 v v pgm nc a8 a9 a11 oe a10 ce o7 o6 o5 o4 o3 pp ss cc a6 a5 a4 a3 a2 a1 a0 nc o0 a8 a9 a11 nc oe a10 ce o7 o6 a7 a12 v nu vcc pgm nc o1 o2 v nu o3 o4 o5 pp ss 5 6 7 8 9 10 11 12 13 29 28 27 26 25 24 23 22 21 14 15 16 17 18 19 20 4 3 2 1 32 31 30 dip/soic plcc 27lv64 27lv64 64k (8k x 8) low-voltage cmos eprom this document was created with framemake r404
27lv64 ds11024e-page 2 1996 microchip technology inc. 1.0 electrical characteristics 1.1 maxim um ratings* v cc and input voltages w.r.t. v ss ....... -0.6v to + 7.25v v pp voltage w.r.t. v ss during programming .......................................... -0.6v to +14v voltage on a9 w.r.t. v ss ...................... -0.6v to +13.5v output voltage w.r.t. v ss ............... -0.6v to v cc +1.0v storage temperature .......................... -65?c to +150?c ambient temp. with power applied ..... -65?c to +125?c *notice: stresses above those listed under ?aximum ratings may cause permanent damage to the device. this is a stress rat- ing only and functional operation of the device at those or any other conditions above those indicated in the operation listings of this speci?ation is not implied. exposure to maximum rating con- ditions for extended periods may affect device reliability. table 1-1: pin function table name function a0-a12 address inputs ce chip enable oe output enable pgm program enable v pp programming voltage o0 - o7 data output v cc +5v or +3v power supply v ss ground nc no connection; no internal connec- tions nu not used; no external connection is allowed table 1-2: read operation dc characteristics v cc = 3.0v to 5.5v unless otherwise speci?d commercial: tamb = 0?c to +70?c industrial: tamb = -40?c to +85?c parameter part* status symbol min. max. units conditions input voltages all logic "1" logic "0" v ih v il 2.0 -0.5 v cc +1 0.8 v v input leakage all i li -10 10 m av in = 0 to v cc output voltages all logic "1" logic "0" v oh v ol 2.4 0.45 v v i oh = -400 m a i ol = 2.1 ma output leakage all i lo -10 10 m av out = 0v to v cc input capacitance all c in 6 pf v in = 0v; tamb = 25 c; f = 1 mhz output capacitance all c out ?2pfv out = 0v; tamb = 25 c; f = 1 mhz power supply current, active c i ttl input ttl input i cc 1 i cc 2 20 @ 5.0v 8 @ 3.0v 25 @ 5.0v 10 @ 3.0v ma ma ma ma v cc = 5.5v; v pp = v cc f = 1 mhz; oe = ce = v il ; i out = 0 ma; v il = -0.1 to 0.8v; v ih = 2.0 to v cc ; note 1 power supply current, standby c i all ttl input ttl input cmos input i cc ( s ) 1 @ 3.0v 2@ 3.0v 100 @ 3.0v ma ma m ace = v cc 0.2v * parts: c=commercial temperature range; i=industrial temperature range note 1: typical active current increases .5 ma per mhz up to operating frequency for all temperature ranges.
1996 microchip technology inc. ds11024e-page 3 27lv64 table 1-3: read operation ac characteristics figure 1-1: read waveforms ac testing waveform: v ih = 2.4v and v il = 0.45v; v oh = 2.0v v ol = 0.8v output load: 1 ttl load + 100 pf input rise and fall times: 10 ns ambient temperature: commercial: tamb = 0?c to +70?c industrial: tamb = -40?c to +85?c parameter sym 27lv64-20 27lv64-25 27lv64-30 units conditions min. max. min. max. min. max. address to output delay t acc 200 250 300 ns ce = oe = v il ce to output delay t ce 200 250 300 ns oe = v il oe to output delay t oe 100 125 125 ns ce = v il ce or oe to o/p high impedance t off 0 50 0 50 0 50 ns output hold from address ce or oe , whichever goes ?st t oh 000ns address ce v ih v il v ih v il v ih v il oe outputs o0 - o7 v oh v ol address valid t ce(2) t oe(2) high z valid output t acc (1) t off is specified for oe or ce, whichever occurs first (2) oe may be delayed up to t ce - t oe after the falling edge of ce without impact on t ce (3) this parameter is sampled and is not 100% tested. high z t oh t off(1,3) notes:
27lv64 ds11024e-page 4 1996 microchip technology inc. table 1-4: programming dc characteristics table 1-5: programming ac characteristics ambient temperature: tamb = 25 c 5 c v cc = 6.5v 0.25v, v pp = v h = 13.0v 0.25v parameter status symbol min. max. units conditions input voltages logic? logic? v ih v il 2.0 -0.1 v cc +1 0.8 v v input leakage i li -10 10 m av in = 0v to v cc output voltages logic? logic? v oh v ol 2.4 0.45 v v i oh = -400 m a i ol = 2.1 ma v cc current, program & verify i cc 2 20 ma note 1 v pp current, program i pp 2 25 ma note 1 a9 product identi?ation v h 11.5 12.5 v note 1: v cc must be applied simultaneously or before v pp and removed simultaneously or after v pp . for program, program verify ac testing waveform: v ih =2.4v and v il =0.45v; v oh =2.0v; v ol =0.8v and program inhibit modes ambient temperature: tamb=25 c 5 c v cc = 6.5v 0.25v, v pp = v h = 13.0v 0.25v parameter symbol min. max. units remarks address set-up time t as 2 m s data set-up time t ds 2 m s data hold time t dh 2 m s address hold time t ah 0 m s float delay (2) t df 0 130 ns v cc set-up time t vcs 2 m s program pulse width (1) t pw 95 105 m s 100 m s typical ce set-up time t ces 2 m s oe set-up time t oes 2 m s v pp set-up time t vps 2 m s data valid from oe t oe 100 ns note 1: for express algorithm, initial programming width tolerance is 100 m s 5%. note 2: this parameter is only sampled and not 100% tested. output ?at is de?ed as the point where data is no longer driven (see timing diagram).
1996 microchip technology inc. ds11024e-page 5 27lv64 figure 1-2: programming waveforms (1) table 1-6: modes operation mode ce oe pgm v pp a9 o0 - o7 read v il v il v ih v cc xd out program v il v ih v il v h xd in program verify v il v il v ih v h xd out program inhibit v ih xxv h x high z standby v ih xxv cc x high z output disable v il v ih v ih v cc x high z identity v il v il v ih v cc v h identity code x = don? care v ih v il v ih v il 13.0 v (3) 5.0 v 6.5 v (3) 5.0 v v ih v il v ih v il v ih v il address data v pp v cc ce pgm oe address stable t ah t ds t dh t vps t df (2) t as program data in stable data out valid verify t vcs the input timing reference is 0.8v for v il and 2.0v for v ih . t df and t oe are characteristics of the device but must be accommodated by the programmer. vcc = 6.5v 0.25v, v pp = v h = 13.0v 0.25v for express algorithm. notes: (1) (2) (3) t pw t opw t oes t oe (2) t ces high z 1.2 read mode (see timing diagrams and ac characteristics) read mode is accessed when a) the ce pin is low to power up (enable) the chip b) the oe pin is low to gate the data to the output pins for read operations, if the addresses are stable, the address access time (t acc ) is equal to the delay from ce to output (t ce ). data is transferred to the output after a delay from the falling edge of oe (t oe ).
27lv64 ds11024e-page 6 1996 microchip technology inc. 1.3 standb y mode the standby mode is de?ed when the ce pin is high (v ih ) and a program mode is not de?ed. when these conditions are met, the supply current will drop from 20 ma to 100 m a. 1.4 output enab le this feature eliminates bus contention in microproces- sor-based systems in which multiple devices may drive the bus. the outputs go into a high impedance state when the following condition is true: the oe and pgm pins are both high. 1.5 erase mode (u .v . windo wed v er sions) windowed products offer the capability to erase the memory array. the memory matrix is erased to the all 1s state when exposed to ultraviolet light. to ensure complete erasure, a dose of 15 watt-second/cm 2 is required. this means that the device window must be placed within one inch and directly underneath an ultra- violet lamp with a wavelength of 2537 angstroms, intensity of 12,000 m w/cm 2 for approximately 20 min- utes. 1.6 pr ogramming mode the express algorithm has been developed to improve the programming throughput times in a production environment. up to ten 100-microsecond pulses are applied until the byte is veri?d. no overprogramming is required. a ?wchart of the express algorithm is shown in figure 1-3. programming takes place when: a) v cc is brought to the proper voltage, b) v pp is brought to the proper v h level, c) the ce pin is low, d) the oe pin is high, and e) the pgm pin is low. since the erased state is ??in the array, programming of ??is required. the address to be programmed is set via pins a0-a12 and the data to be programmed is pre- sented to pins o0-o7. when data and address are sta- ble, oe is high, ce is low and a low-going pulse on the pgm line programs that location. 1.7 v erify after the array has been programmed it must be veri- ?d to ensure all the bits have been correctly pro- grammed. this mode is entered when all the following conditions are met: a) v cc is at the proper level, b) v pp is at the proper v h level, c) the ce line is low, d) the pgm line is high, and e) the oe line is low. 1.8 inhibit when programming multiple devices in parallel with dif- ferent data, only ce or pgm need be under separate control to each device. by pulsing the ce or pgm line low on a particular device in conjunction with the pgm or ce line low, that device will be programmed; all other devices with ce or pgm held high will not be pro- grammed with the data, although address and data will be available on their input pins (i.e., when a high level is present on ce or pgm ); and the device is inhibited from programming. 1.9 identity mode in this mode speci? data is output which identi?s the manufacturer as microchip technology inc. and device type. this mode is entered when pin a9 is taken to v h (11.5v to 12.5v). the ce and oe lines must be at v il . a0 is used to access any of the two non-erasable bytes whose data appears on o0 through o7. pin input output identity a0 0 7 o 6 o 5 o 4 o 3 o 2 o 1 o 0 h e x manufacturer device type* v il v ih 0 0 0 0 1 0 0 0 1 0 0 0 0 1 1 0 29 02 * code subject to change
1996 microchip technology inc. ds11024e-page 7 27lv64 figure 1-3: programming express algorithm start addr = first location v cc = 6.5v v pp = 13.0v x = 0 verify byte pass fail x = 10 ? no yes device failed last address? no increment address conditions: t amb = 25?c 5?c v cc = 6.5 0.25v v pp = 13.0 0.25v yes v cc = v pp = 4.5v, 5.5v device passed all bytes = original data? device failed yes no program one 100 m s pulse increment x
27lv64 ds11024e-page 8 1996 microchip technology inc. notes:
1996 microchip technology inc. ds11024e-page 9 27lv64 notes:
27lv64 ds11024e-page 10 1996 microchip technology inc. notes:
27lv64 1996 microchip technology inc. ds11024e-page 11 27l v64 pr oduct identi cation system to order or to obtain information, e.g., on pricing or delivery, please use the listed part numbers, and refer to the factory or the listed sales of?es. package: l = plastic leaded chip carrier p = plastic dip (600 mil) so = plastic soic (300 mil) temperature blank = 0?c to +70?c range: i = ?0?c to +85?c access 20 = 200 ns time: 25 = 250 ns 30 = 300 ns device: 27lv64 64k (8k x 8) low-voltage cmos eprom 27l v64?5i/p
ds11024e-page 12 1996 microchip technology inc. information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates. no repre- sentation or warranty is given and no liability is assumed by microchip technology incorporated with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. use of microchips products as critical components in life support systems is not autho- rized except with express written approval by microchip. no licenses are conveyed, implicitly or otherwise, under any intellectual property rights. the microchip logo and name are registered trademarks of microchip technology inc. all rights reserved. all other trademarks mentioned herein are the property of their respective companies. w orldwide s ales & s ervice asia/pacific china microchip technology unit 406 of shanghai golden bridge bldg. 2077 yan?n road west, hongiao district shanghai, peoples republic of china tel: 86 21 6275 5700 fax: 011 86 21 6275 5060 hong kong microchip technology rm 3801b, tower two metroplaza 223 hing fong road kwai fong, n.t. hong kong tel: 852 2 401 1200 fax: 852 2 401 3431 india microchip technology no. 6, legacy, convent road bangalore 560 025 india tel: 91 80 526 3148 fax: 91 80 559 9840 korea microchip technology 168-1, youngbo bldg. 3 floor samsung-dong, kangnam-ku, seoul, korea tel: 82 2 554 7200 fax: 82 2 558 5934 singapore microchip technology 200 middle road #10-03 prime centre singapore 188980 tel: 65 334 8870 fax: 65 334 8850 taiwan, r.o.c microchip technology 10f-1c 207 tung hua north road taipei, taiwan, roc tel: 886 2 717 7175 fax: 886 2 545 0139 europe united kingdom arizona microchip technology ltd. unit 6, the courtyard meadow bank, furlong road bourne end, buckinghamshire sl8 5aj tel: 44 1628 850303 fax: 44 1628 850178 france arizona microchip technology sarl zone industrielle de la bonde 2 rue du buisson aux fraises 91300 massy - france tel: 33 1 69 53 63 20 fax: 33 1 69 30 90 79 germany arizona microchip technology gmbh gustav-heinemann-ring 125 d-81739 muenchen, germany tel: 49 89 627 144 0 fax: 49 89 627 144 44 italy arizona microchip technology srl centro direzionale colleone pas taurus 1 viale colleoni 1 20041 agrate brianza milan italy tel: 39 39 6899939 fax: 39 39 689 9883 japan microchip technology intl. inc. benex s-1 6f 3-18-20, shin yokohama kohoku-ku, yokohama kanagawa 222 japan tel: 81 45 471 6166 fax: 81 45 471 6122 9/3/96 americas corporate of?e microchip technology inc. 2355 west chandler blvd. chandler, az 85224-6199 tel: 602 786-7200 fax: 602 786-7277 technical support: 602 786-7627 web: http://www.microchip.com atlanta microchip technology inc. 500 sugar mill road, suite 200b atlanta, ga 30350 tel: 770 640-0034 fax: 770 640-0307 boston microchip technology inc. 5 mount royal avenue marlborough, ma 01752 tel: 508 480-9990 fax: 508 480-8575 chicago microchip technology inc. 333 pierce road, suite 180 itasca, il 60143 tel: 708 285-0071 fax: 708 285-0075 dallas microchip technology inc. 14651 dallas parkway, suite 816 dallas, tx 75240-8809 tel: 972 991-7177 fax: 972 991-8588 dayton microchip technology inc. suite 150 two prestige place miamisburg, oh 45342 tel: 513 291-1654 fax: 513 291-9175 los angeles microchip technology inc. 18201 von karman, suite 1090 irvine, ca 92612 tel: 714 263-1888 fax: 714 263-1338 new york microchip technmgy inc. 150 motor parkway, suite 416 hauppauge, ny 11788 tel: 516 273-5305 fax: 516 273-5335 san jose microchip technology inc. 2107 north first street, suite 590 san jose, ca 95131 tel: 408 436-7950 fax: 408 436-7955 toronto microchip technology inc. 5925 airport road, suite 200 mississauga, ontario l4v 1w1, canada tel: 905 405-6279 fax: 905 405-6253 all rights reserved. 1996, microchip technology incorporated, usa. 9/96 printed on recycled paper.

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